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Rare earth doped III-nitrides for optoelectronic and spintronic applications by Kevin O"Donnell

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Published by Springer, In Association with Canopus Academic Pub. in Dordrecht, the Netherlands, New York, Bristol, UK .
Written in English

Subjects:

  • Doped semiconductors,
  • Optoelectronics,
  • Aluminum nitride,
  • Gallium nitride,
  • Materials,
  • Spintronics,
  • Indium compounds,
  • Compound semiconductors

Book details:

Edition Notes

Includes bibliographical references and index.

StatementKevin O"Donnell, Volkmar Dierolf, editors
SeriesTopics in applied physics -- 124, Topics in applied physics -- v. 124.
Classifications
LC ClassificationsQC611.8.D66 R37 2010
The Physical Object
Paginationxvi, 355 p. :
Number of Pages355
ID Numbers
Open LibraryOL25343277M
ISBN 109048128765, 9048128773
ISBN 109789048128761, 9789048128778
LC Control Number2010924738
OCLC/WorldCa401158929

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This book provides a snapshot of recent progress in the field of rare-earth doped group III-nitride semiconductors, especially GaN, but extending to AIN and the alloys AlGaN, AlInN and InGaN. This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoelectronic and spintronic : $ Request PDF | Rare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications | uction and overview. Kevin O'DONNELL, Strathclyde, UK. . Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications. / O'Donnell, Kevin (Editor); Dierolf, Volkmar (Editor). Dordrecht, The Netherlands: Springer, p. (Topics in Applied Physics; Vol. ). Research output: Book/Report › BookCited by: Rare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications: : O'Donnell, Kevin, Dierolf, Volkmar: Libri in altre lingueFormat: Copertina rigida.

Rare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications Rare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications. Pub Date: DOI: / Bibcode. Køb Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications som bog på engelsk til markedets laveste pris og få leveret i morgen. This book summarises recent progress in the science and technology of rare-earth doped nitrides, pro. Wakahara A. () Electroluminescent Devices Using RE-Doped III-Nitrides. In: O’Donnell K., Dierolf V. (eds) Rare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications. Topics in Applied Physics, vol Ion implantation is a convenient method to introduce Rare Earth (RE) ions into a host matrix in a controlled manner with a reproducible profile; it also allows lateral patterning for selective area doping. However, a major drawback of the technique is the lattice damage inevitably caused by energetic heavy ions as they penetrate a crystalline host. The crystalline quality is usually recovered.

This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors. Rare earth doped III-nitrides for optoelectronic and spintronic applications. [Kevin O'Donnell; Volkmar Dierolf;] It is the first book on Read more Rating: (not yet rated) 0 with reviews - Be the first. Subjects: Doped semiconductors -- Materials. Compound semiconductors -- Materials. O'Donnell, K , Summary and prospects for future work. in K O'Donnell & V Dierolf (eds), Rare-earth doped III-nitrides for optoelectronic and spintronic applications. Topics in applied physics, vol. , Springer, pp. Get this from a library! Rare earth doped III-nitrides for optoelectronic and spintronic applications. [Kevin O'Donnell; Volkmar Dierolf;] -- This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. Improved theoretical.